Search results for "Dielectric polarisation"

showing 2 items of 2 documents

High resolution x-ray investigation of periodically poled lithium tantalate crystals with short periodicity

2009

Domain engineering technology in lithium tantalate is a well studied approach for nonlinear optical applications. However, for several cases of interest, the realization of short period structures (< 2 ��m) is required, which make their characterization difficult with standard techniques. In this work, we show that high resolution x-ray diffraction is a convenient approach for the characterization of such structures, allowing us to obtain in a nondestructive fashion information such as the average domain period, the domain wall inclination, and the overall structure quality.

DiffractionMaterials scienceFerroelectric materialFOS: Physical sciencesGeneral Physics and AstronomyDielectric polarisationElectric domain wallDomain (software engineering)chemistry.chemical_compoundQuality (physics)OpticsLanthanum compoundCondensed Matter - Materials Sciencebusiness.industryMaterials Science (cond-mat.mtrl-sci)Polarization and depolarization.Characterization (materials science)X-ray diffractionDomain wall (magnetism)chemistryLithium tantalateHysteresiDomain engineeringDomain structurebusinessRealization (systems)Optics (physics.optics)Physics - Optics
researchProduct

Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

2001

Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentratio…

Electron densityTwo-dimensional electron gasMaterials sciencePhotoluminescenceIII-V semiconductorsAluminium compounds ; Gallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Semiconductor heterojunctions ; Two-dimensional electron gas ; Electron density ; Internal stresses ; Photoluminescence ; Raman spectra ; Excitons ; Interface states ; Piezoelectric semiconductors ; Dielectric polarisationExcitonAnalytical chemistryGeneral Physics and AstronomyDielectric polarisationMolecular physicsCondensed Matter::Materials Sciencesymbols.namesakeResidual stress:FÍSICA [UNESCO]Emission spectrumPiezoelectric semiconductorsPhotoluminescenceAluminium compoundsUNESCO::FÍSICAWide-bandgap semiconductorGallium compoundsHeterojunctionInterface statesWide band gap semiconductorssymbolsExcitonsRaman spectraSemiconductor heterojunctionsRaman spectroscopyInternal stressesElectron density
researchProduct